Evaluation of SF6 reactive ion etching performance with a permanent magnet located behind the substrate based on a simple design concept

Taisei Motomura, Kazunori Takahashi, Yuji Kasashima, Kazuya Kikunaga, Fumihiko Uesugi, Akira Ando

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Reactive ion etching performance with a permanent magnet located behind the substrate was evaluated in a compact vacuum chamber configuration with 38 mm inner diameter. This study presents a simple design concept for a compact SF6 plasma reactor that has high-density plasmas radially compressed by a magnetic field. The magnetic field lines, which are created by a solenoid coil and permanent magnet, effectively transport ions to the substrate located downstream from the plasma source, and thereby reduce losses of plasma to the radial boundaries of the compact chamber. An etching rate of 6.0 m/min was obtained with input RF power of 500 W, a pulsed plasma discharge with duty ratio of 10% and chamber pressure of 0.2 Pa. The etching rate achieved in the present study was increased more than tenfold, in comparison with our previous study, performed under similar conditions but without a permanent magnet located behind the substrate.

本文言語English
ページ(範囲)11-15
ページ数5
ジャーナルJournal of the Vacuum Society of Japan
59
1
DOI
出版ステータスPublished - 2016

ASJC Scopus subject areas

  • 材料科学(全般)
  • 器械工学
  • 表面および界面
  • 分光学

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