Evaluation of power SiC-MOSFET using super-higher-order scanning nonlinear dielectric microscopy: Imaging of carrier distribution and depletion layer

N. Chinone, Y. Cho, T. Nakamura

研究成果: Paper査読

抄録

Evaluation techniques for semiconductor devices are keys for device development with low cost and short time to market. Especially, dopant and depletion layer distribution in devices is a critical electrical property that needs to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We developed a method for imaging detailed dopant distribution and depletion layers in semiconductor devices using SHO-SNDM. As a demonstration, a cross-section of a SiC power semiconductor device was measured by this method and detailed dopant distribution and depletion layer distributions were imaged.

本文言語English
ページ289-292
ページ数4
出版ステータスPublished - 2014
イベント40th International Symposium for Testing and Failure Analysis, ISTFA 2014 - Houston, United States
継続期間: 2014 11 92014 11 13

Other

Other40th International Symposium for Testing and Failure Analysis, ISTFA 2014
国/地域United States
CityHouston
Period14/11/914/11/13

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 安全性、リスク、信頼性、品質管理
  • 電子工学および電気工学

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