Evaluation of performance in vertical 1T-DRAM and planar 1T-DRAM

Yuto Norifusa, Tetsuo Endoh

研究成果: Article査読

抄録

The performances of the conventional planar type 1T DRAM and the Vertical type 1T DRAM are compared based on structure difference using a fully-consistent device simulator. We discuss the structural advantage of the Vertical type 1T-DRAM in comparison with the conventional planar type 1T-DRAM, and evaluate their performance in each operating mode such as write, erase, read, and hold; and discuss its cell performances such as Cell Current Margin and data retention. These results provide a useful guideline designing the high performance Vertical type 1T-DRAM cell.

本文言語English
ページ(範囲)847-853
ページ数7
ジャーナルIEICE Transactions on Electronics
E95-C
5
DOI
出版ステータスPublished - 2012 5月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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