Evaluation of mev si implanted si using beam acoustic method

Hisato Ogiso, Shizuka Nakano, Yoshihiko Nagata, Kazushi Yamanaka, Toshio Koda

研究成果: Article査読

3 被引用数 (Scopus)

抄録

3 MeV Si ion implanted Si specimens were examined by photoacoustic microscopy, ion acoustic method, and scanning acoustic microcopy(SAM). The image of ion implanted region could be obtained from the phase of photoacoustic signal. Moreover, the velocity change of surface acoustic wave by ion implantation could be found from the V(z) curve measured by SAM. We assume that the cause of these results is a change of thermal conductivity and the elasticity modulus as a result of the ion implantation.

本文言語English
ページ(範囲)250-252
ページ数3
ジャーナルJapanese journal of applied physics
30
DOI
出版ステータスPublished - 1991 1月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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