Evaluation of mev si implanted si using beam acoustic method

3 MeV Si ion implanted Si specimens were examined by photoacoustic microscopy, ion acoustic method, and scanning acoustic microcopy(SAM). The image of ion implanted region could be obtained from the phase of photoacoustic signal. Moreover, the velocity change of surface acoustic wave by ion implantation could be found from the V(z) curve measured by SAM. We assume that the cause of these results is a change of thermal conductivity and the elasticity modulus as a result of the ion implantation.