Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method

W. Li, K. Nakajima, C. Dou, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

抄録

An investigation of interface state density of a MOS capacitor with three-dimensional Si surface has been conducted by conductance method. Through comparison with planar devices with (100) and (110) oriented surfaces, the conductance spectra of the 3D surfaces have been explained.

本文言語English
ホスト出版物のタイトルChina Semiconductor Technology International Conference 2012, CSTIC 2012
ページ1275-1279
ページ数5
1
DOI
出版ステータスPublished - 2012
外部発表はい
イベントChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
継続期間: 2012 3 182012 3 19

出版物シリーズ

名前ECS Transactions
番号1
44
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherChina Semiconductor Technology International Conference 2012, CSTIC 2012
国/地域China
CityShanghai
Period12/3/1812/3/19

ASJC Scopus subject areas

  • 工学(全般)

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