The hydrogenation effect in Poly-Si TFT was evaluated by using the charge pumping method for the first time. The generation-recombination current through the grain boundary traps is measured as the charge pumping current. Consequently, the grain boundary trap properties could be directly evaluated. It was found that the grain boundary trap density is reduced to around one fourth by the hydrogenation treatment for 8 hours in poly-Si TFTs fabricated by the high temperature process. The grain boundary traps have the tendency of increasing densities approaching the energy band edge. In poly-Si TFTs fabricated by the low temperature process, a considerably high trap density still remained even after 8 hour hydrogenation treatment.
|出版ステータス||Published - 1991 1 1|
|イベント||23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn|
継続期間: 1991 8 27 → 1991 8 29
|Other||23rd International Conference on Solid State Devices and Materials - SSDM '91|
|Period||91/8/27 → 91/8/29|
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