Evaluation of 1/f noise characteristics in High-k/metal gate and SiON/Poly-Si gate MOSFET with 65nm CMOS Process

Takuya Imamoto, Takeshi Sasaki, Tetsuo Endoh

研究成果: Article査読

抄録

In this paper, we compare 1/f noise characteristics of High-κ/Metal Gate MOSFET and SiON/Poly-Si Gate MOSFET experimentally, and evaluate the time fluctuation of drive current. These MOSFETs are fabricated with 65 nm CMOS process, and their gate lengths (Lg) are 130 nm. Specifically, we focus on the dependency of the time fluctuation of drive current on channel width (W) and temperature (T). First, we evaluate the dependency on channel width. In the case of SiON/Poly-Si Gate MOSFET, when the channel width is narrow such as W=200 nm and W=250 nm, Power Spectrum Density (PSD) depends on 1/f2 at two frequency regions. Moreover, as the channel width is wide such as W=300 nm, W=500 nm and W=1000 nm, PSD depends on 1/f and the value of PSD shifts lower. This is a new phenomena observed for the first time. On the other hand, in the case of High-κ/Metal Gate MOSFET, the value of PSD is about 100 times larger than that of SiON/Poly- Si Gate MOSFET. Moreover, there is no dependency of PSD on channel width ranges from 150 nm to 1000 nm. Second, we evaluate the dependency on temperature. In the case of SiON/Poly-Si Gate MOSFET, when the temperature (T) is lowered from T=27°C to T=-35°C, the dependency changes from the 1/f dependency to the 1/f2 dependency at two different frequency regions. This is also a new phenomena observed for the first time. However, in the case of High-κ/Metal Gate MOSFET, there is no dependency of PSD on temperature ranges from 27°C to -35°C. These results are useful knowledge for designing future LSI, because PSD dependency shows different characteristics when both channel width and temperature are changed.

本文言語English
ページ(範囲)724-729
ページ数6
ジャーナルIEICE Transactions on Electronics
E94-C
5
DOI
出版ステータスPublished - 2011 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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