Erratum: Influence of oxygen concentration of SI wafer surface in SI emission on Nano ordered three-dimensional structure devices (E-Journal of Surface Science and Nanotechnology (2018) 15 (127-134) DOI: 10.1380/ejssnt.2017.127)

Etsuo Fukuda, Tetsuo Endoh, Takashi Ishikawa, Koji Izunome, Kazutaka Kamijo, Moriya Miyashita, Takao Sakamoto, Hiroyuki Kageshima

研究成果: Comment/debate査読

抄録

The publisher would like to apologize for errors that occurred in the article [1] published on 14 December, 2017. Captions of Fig. 5 and Tables I, II, and III are inappropriate. The captions should be corrected as follows: FIG. 5. Pillar cross-sectional structure images (a) before oxidation and (b) after oxidation. (c) An actual cross-sectional shape of the pillar after oxidation. TABLE I. Experimental parameter list. TABLE II. Oxidation temperature dependent experimental parameters. TABLE III. Comparison of difference between high and low oxygen concentration wafer. Another correction is that “Fig. 9” which appears at the end of Sec. IV C. (p. 132) should read as “Fig. 10”. The publisher takes full responsibility for these errors.

本文言語English
ページ(範囲)375
ページ数1
ジャーナルe-Journal of Surface Science and Nanotechnology
16
DOI
出版ステータスPublished - 2018 8 25

ASJC Scopus subject areas

  • バイオテクノロジー
  • バイオエンジニアリング
  • 凝縮系物理学
  • 材料力学
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Erratum: Influence of oxygen concentration of SI wafer surface in SI emission on Nano ordered three-dimensional structure devices (E-Journal of Surface Science and Nanotechnology (2018) 15 (127-134) DOI: 10.1380/ejssnt.2017.127)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル