Erratum: Extraction of drain current and effective mobility in epitaxial graphene channel field-effect transistors on SiC layer grown on silicon substrates (Japanese Journal of Applied Physics (2010) 49 (04DF17))

Hyun Chul Kang, Roman Olac-Vaw, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji

研究成果: Comment/debate査読

本文言語English
ページ(範囲)792011
ページ数1
ジャーナルJapanese journal of applied physics
49
7 PART 1
DOI
出版ステータスPublished - 2010 7

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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