Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (0 0 1), (1 1 1)A,B and (1 1 0) surfaces

Toshio Kochiya, Yutaka Oyama, Ken Suto, Jun Ichi Nishizawa

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The epitaxial lateral overgrowth (ELO) was performed on {001}, {111}A,B and {110} oriented InP by liquid-phase epitaxy at constant growth temperature (450-650°C). According to the observations of cross-sectional shape, the orientation dependence of the vertical growth rate was determined to be {110}<{111}A,B>{100} under the present experimental conditions. The etch pit density in the ELO layer was lower than on openings. In PL mapping observations, PL properties were improved on the ELO layer.

本文言語English
ページ(範囲)465-468
ページ数4
ジャーナルMaterials Science in Semiconductor Processing
6
5-6
DOI
出版ステータスPublished - 2003 10月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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