In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2008 12 1|
|イベント||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
継続期間: 2007 10 15 → 2007 10 18
ASJC Scopus subject areas
- Condensed Matter Physics