Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) si micro channel areas

Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi

研究成果: Conference article査読

35 被引用数 (Scopus)

抄録

In this paper, we demonstrate that micro selective area growth (μSAG) is effective in improving the crystal quality of In-GaAs on (111) Si through the decrease in the number of the nuclei on a selective growth Si area. It is found that smaller selective areas are better in the morphology of the epitaxial films, while the pitch of selective areas yields a trade-off relationship between the selectivity and the lateral growth length. It is demonstrated that InGaAs films with good morphology and large lateral growth areas have been obtained by μSAG on (111) Si dot areas with the diameter of 2 μm and the pitch of 5 μm using metal-organic vapor phase epitaxy (MOVPE). This result suggests that μSAG using MOVPE is a promising technique for III-V-On-Insulator structures on Si substrates.

本文言語English
ページ(範囲)2733-2735
ページ数3
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
5
9
DOI
出版ステータスPublished - 2008 12 1
イベント34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
継続期間: 2007 10 152007 10 18

ASJC Scopus subject areas

  • Condensed Matter Physics

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