Epitaxial growth of zinc-blende CrAs/GaAs multilayer

M. Mizuguchi, H. Akinaga, T. Manago, K. Ono, M. Oshima, M. Shirai, M. Yuri, H. J. Lin, H. H. Hsieh, C. T. Chen

研究成果: Article査読

96 被引用数 (Scopus)

抄録

Zinc-blende CrAs/GaAs multilayers were grown by molecular beam epitaxy. It was certified that each CrAs layer maintains an epitaxial relationship with the zinc-blende GaAs structure judging from the reflection high-energy electron diffraction observation. The film contains thicker zinc- blende CrAs layers in total than the CrAs thin film directly grown on the GaAs substrate which has the critical thickness of 3 nm. It was clarified that the optimum thicknesses of CrAs and GaAs to keep a good epitaxial relationship are 2 ML and 2 ML, respectively. The electronic structure of the multilayer is thought to be close to that of the (Ga, Cr)As thin film which has 50% of Cr content judging from x-ray absorption spectroscopy measurements.

本文言語English
ページ(範囲)7917-7919
ページ数3
ジャーナルJournal of Applied Physics
91
10 I
DOI
出版ステータスPublished - 2002 5月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Epitaxial growth of zinc-blende CrAs/GaAs multilayer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル