Epitaxial growth of the wurtzite (112̄0) AlN thin films on Si(100) with MnS buffer layer

Jeong Hwan Song, Toyohiro Chikyo, Young Zo Yoo, Parhat Ahmet, Hideomi Koinuma

研究成果: Article査読

13 被引用数 (Scopus)

抄録

A growth of the wurtzite (112̄0) AlN thin films on Si(100) with MnS buffer layer was demonstrated for the first time by KrF pulsed excimer laser deposition. The presence of an epitaxial MnS layer on Si(100) substrate was found to affect the orientation of the AlN growth. AlN films was grown epitaxially on the MnS buffer at a substrate temperature higher than 700 °C. The AlN/MnS/Si heterostructure is investigated by X-ray diffraction and in situ reflection high-energy electron diffraction. An AlN(112̄0) ∥ MnS(100) ∥ Si(100) with in-plane alignment of AlN[0001] ∥ MnS[010] ∥ Si[010] and AlN[11̄00] ∥ MnS[001] ∥ Si[001] was observed. This result indicates a possibility of non-polar epitaxial AlN films on Si(100) with an expectation of a new substrate for GaN based optoelectronic devices on silicon.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
41
11 B
出版ステータスPublished - 2002 11 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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