Epitaxial growth of SrRuO3 thin film electrode on Si by pulsed laser deposition

Takamitsu Higuchi, Yuxi Chen, Junichi Koike, Setsuya Iwashita, Masaya Ishida, Tatsuya Shimoda

研究成果: Article査読

12 被引用数 (Scopus)


Pseudocubic SrRuO3 (100) epitaxial thin films were fabricated on Si (100) with a SrO buffer layer by pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) revealed that the SrO layer is epitaxially grown on naturally oxidized Si substrates with an orientation relationship of SrO (110)/Si (100) and SrO 〈001〉//Si (011). Subsequent SrRuO3 deposition resulted in a (100) epitaxial thin film possessing good crystallinity with a full-width at half maximum (FWHM) of 1.9° in the SrRuO3 (200) rocking curve by X-ray diffraction (XRD). Based on the Gibbs free energy change in the reaction of silicon with alkaline earth metal oxides, deoxidization of SiO2 on Si by Sr is thought to play an important role in the epitaxial growth of SrO. Cross-sectional observation for the optimized SrRuO3/SrO/Si sample using transmission electron microscopy (TEM) revealed that the thickness of the SrO layer is less than 2nm and that the SrRuO3 electrode forms an epitaxial thin film almost directly on Si.

ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
11 B
出版ステータスPublished - 2002 11月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)


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