Epitaxial growth of Si1-x-yGexCy film on Si(100) in a SiH4-GeH4-CH3SiH3 reaction

A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda, M. Fujiu, T. Takatsuka, A. Moriya, M. Sakuraba, T. Matsuura, Junichi Murota

研究成果: Conference article査読

21 被引用数 (Scopus)


Epitaxial growth of Si1-x-yGexCy epitaxial on S(100) has been investigated at 550 °C in a SiH4-GeH4-CH3SiH3-H2 gas mixture using an ultraclean hot-wall low pressure chemical vapor deposition (LPCVD) system. With increasing CH3SiH3 partial pressure, the deposition rate decreases depending on the Ge fraction, the C concentration increases linearly up to about 1021 cm-3, and the Ge fraction increases at a high CH3SiH3 partial pressure. These characteristics can be explained by the modified Langmuir-type formulation with the assumption that CH3SiH3 is adsorbed more preferably at the Si-Ge pair site, suppressing SiH4 and GeH4 adsorption. The electrical characteristics of the Pimplanted Si1-x-yGexCy epitaxial film were evaluated and it was found that electrically inactive P increases at a C concentration over 3×1020 cm-3, which corresponds to the concentration where the lattice constant deviates from that calculated using Vegard's law.

ジャーナルThin Solid Films
出版ステータスPublished - 2000 7 3
イベントThe International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
継続期間: 1999 9 121999 9 17

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学


「Epitaxial growth of Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> film on Si(100) in a SiH<sub>4</sub>-GeH<sub>4</sub>-CH<sub>3</sub>SiH<sub>3</sub> reaction」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。