Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

Pham Ngoc Thao, Shinya Yoshida, Shuji Tanaka

研究成果: Article査読

6 被引用数 (Scopus)

抄録

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7m, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ∼250 as a dielectric constants ϵr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

本文言語English
論文番号127201
ジャーナルJapanese journal of applied physics
56
12
DOI
出版ステータスPublished - 2017 12

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn<sub>1/3</sub>,Nb<sub>2/3</sub>)O<sub>3</sub>-Pb(Zr,Ti)O<sub>3</sub> thin film on Si for high performance piezoelectric micromachined ultrasonic transducer」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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