Epitaxial growth of highly strained Si on relaxed Ge/Si(1 0 0) using ECR plasma CVD without substrate heating

Katsutoshi Sugawara, Masao Sakuraba, Junichi Murota

研究成果: Article

9 引用 (Scopus)

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By using electron-cyclotron resonance (ECR) plasma chemical vapour deposition (CVD), epitaxial growth of highly strained Si on 84%-relaxed Ge/Si(1 0 0) without substrate heating has been investigated. For a Si thickness of 1.7 nm, the deposited surface is atomically flat, and the strain (ratio of change in the lattice constant to strain-free lattice constant) is about 4%. This value indicates that the strained Si lattice is matched to the relaxed Ge lattice. Furthermore, it is found that the heterostructure of strained Si/Ge is thermally stable up to 600 °C.

元の言語English
記事番号S10
ジャーナルSemiconductor Science and Technology
22
発行部数1
DOI
出版物ステータスPublished - 2007 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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