Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

Somu Kumaragurubaran, Takahiro Nagata, Yoshifumi Tsunekawa, Kenichiro Takahashi, Sung Gi Ri, Setsu Suzuki, Toyohiro Chikyow

研究成果: Article査読

8 被引用数 (Scopus)

抄録

An epitaxial thin-film capacitor based on relaxor ferroelectric oxide, BaTiO3-Bi(Mg2/3Nb1/3)O3 (BT-BMN), has been realized on Nb:SrTiO3 substrates. A high dielectric constant exceeding 400 was attained on high-temperature annealed films at frequencies below 100 kHz. BT-BMN thin-film exhibited a broad dielectric constant variation against temperature and also the frequency dependent dielectric-constant-maximum temperature. Excellent dielectric constant stability below 10% was achieved in 75-400°C temperature range with a low dielectric loss. This exemplifies BT-BMN as a dielectric for monolithically integrated capacitors that can function up to 400°C, breaking the present 175°C limit of bulky capacitors, in high-power high-temperature electronic devices.

本文言語English
ページ(範囲)29-33
ページ数5
ジャーナルThin Solid Films
592
DOI
出版ステータスPublished - 2015 10月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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