Epitaxial growth of heavily P-doped Si films at 450°C by alternately supplied PH3 and SiH4

Y. Shimamune, M. Sakuraba, T. Matsuura, Junichi Murota

研究成果: Conference article査読

5 被引用数 (Scopus)

抄録

Epitaxial growth of heavily P-doped Si films at 450°C by alternately supplied PH3 and SiH4 has been investigated using an ultraclean low-pressure chemical vapor deposition (CVD) system. By exposing the Si(100) surface to PH3 at a partial pressure of 0.26Pa at 450-750°C, two or three atomic-layers of P are adsorbed. Thermal desorption of P occurs at 650°C and only slightly at 450°C. By alternately supplied PH3 at 300-450°C and SiH4 at 450°C, opitaxial growth of heavily P-doped Si films of average P concentrations of ∼1021cm-3 are achieved. In the ease of 4 cycles of alternately supplied PH3 and SiH4 at 450°C, 26nm-thick P-doped epitaxial Si film, with the average P concentration of 6×102°cm-3, is formed. It is found that about 60% of P is electrically active even in the heavily P-doped epitaxial Si film and the resistivity is as low as ∼3×10 -4Ωcm. By annealing the film at 550°C and above, it is found that the carder concentration decreases and the resistivity increases. It is suggested that very low-resistive epitaxial Si film is formed by alternately supplied PH3 and SiH4 only at a very low-temperature such as 450°C.

本文言語English
ジャーナルJournal De Physique. IV : JP
11
3
出版ステータスPublished - 2001 1 1
イベント13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
継続期間: 2001 8 262001 8 31

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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