Epitaxial growth of heavily B-doped Si and Ge films on Si(100) by low-energy ECR Ar plasma CVD without substrate heating

Yusuke Abe, Shuji Kubota, Masao Sakuraba, Junichi Murota, Shigeo Sato

研究成果: Article査読

4 被引用数 (Scopus)

抄録

By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), heavily B-doped Si and Ge films can be grown epitaxially on Si(100) even without substrate heating. It was also clarified that high carrier concentration above 1018 cm-3 in Si can be obtained by low-temperature heat treatment at as low as 200-300°C. In the case of B-doped Ge on Si(100), by introducing an 1 nm-thick undoped epitaxial Ge buffer layer, crystallinity and electrical resistivity can be improved.

本文言語English
ページ(範囲)223-228
ページ数6
ジャーナルECS Transactions
58
9
DOI
出版ステータスPublished - 2013

ASJC Scopus subject areas

  • 工学(全般)

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