Epitaxial growth and optical properties of semipolar (112̄2) GaN and InGaN/GaN quantum wells on GaN bulk substrates

M. Ueda, K. Kojima, M. Funato, Y. Kawakami, Y. Narukawa, T. Mukai

研究成果: Article査読

101 被引用数 (Scopus)

抄録

GaN and InGaNGaN multiple quantum well (MQW) were grown on semipolar (11 2- 2) GaN bulk substrates by metal organic vapor phase epitaxy. The GaN homoepitaxial layer has an atomically flat surface. Optical reflection measurements reveal polarization anisotropy for the A, B, and C excitons. Free A excitons dominate the photoluminescence (PL) spectrum at 10 K and are accompanied by a weaker, sharp doublet emission due to neutral donor-bound excitons. The InGaNGaN MQW grown on a GaN homoepitaxial layer involves fast radiative recombination processes. The PL decay monitored at 428 nm can be fitted with a double exponential curve, which has lifetimes of 46 and 142 ps at 10 K. These values are two orders of magnitude shorter than those in conventional c -oriented QWs and are attributed to the weakened internal electric field. The emissions from GaN and MQW polarize along the [1 1- 00] direction with polarization degrees of 0.46 and 0.69, respectively, due to the low crystal symmetry.

本文言語English
論文番号211907
ジャーナルApplied Physics Letters
89
21
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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