Epitaxial growth and domain coalescence of sexithiophene induced by the steps on cleaved KBr(0 0 1)

Susumu Ikeda, Manabu Kiguchi, Yuji Yoshida, Kiyoshi Yase, Toru Mitsunaga, Katsuhiko Inaba, Koichiro Saiki

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Epitaxial growth of sexithiophene (6 T) thin films was achieved on KBr (0 0 1) under the optimum condition. Atomic force microscopy revealed that the initially formed in-plane orientation was caused by adsorption of 6 T molecules to the native steps on KBr and it helped formation of single-crystalline domains larger than 30×30μm2. The use of substrate steps as an epitaxial template shows the possibility to create high quality 6T films with potentially large carrier mobility.

本文言語English
ページ(範囲)296-301
ページ数6
ジャーナルJournal of Crystal Growth
265
1-2
DOI
出版ステータスPublished - 2004 4 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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