Epitaxial graphene on silicon substrates

M. Suemitsu, H. Fukidome

研究成果: Article査読

99 被引用数 (Scopus)

抄録

By forming an ultrathin (∼100 nm) SiC film on Si substrates and by annealing it at ∼1500 K in vacuo, few-layer graphene is formed on Si substrates. Graphene grows on three major low-index surfaces: (1 1 1), (1 0 0) and (1 1 0), allowing us to tune its electronic properties by controlling the crystallographic orientation of the substrate. This graphene on silicon (GOS) technology thus paves the way to industrialization of this new material with inherent excellence. With its feasibility in Si technology, GOS is one of the most promising candidates as a material for Beyond CMOS technology.

本文言語English
論文番号374012
ジャーナルJournal of Physics D: Applied Physics
43
37
DOI
出版ステータスPublished - 2010 9月 22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

フィンガープリント

「Epitaxial graphene on silicon substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル