Epitaxial graphene field effect transistors on silicon substrates

Hyun Chul Kang, Hiromi Karasawa, Yu Miyamoto, Hiroyuki Handa, Tetsuya Suemitsu, Maki Suemitsu, Taiichi Otsuji

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

We have fabricated and characterized the field effect transistors having epitaxial-graphene channel grown on Si substrates. Epitaxial graphene is usually formed on SiC substrates by ultrahigh-vacuum (UHV) annealing. We used an approach to grow 3C-SiC(111) on Si substrates and subsequently to anneal it in UHV to make few layers of graphene on the sample surface. Backgate transistors using the SiC layer as a gate insulator was characterized. Although significant gate leakage current is observed, the drain current modulation by the gate voltage is confirmed by extracting the channel current from the total drain current. The drain saturation current of the graphene-channel transistors is in the order of mA/mm due to the large contact resistance that should be minimized in future study.

元の言語English
ホスト出版物のタイトルESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
ページ189-192
ページ数4
DOI
出版物ステータスPublished - 2009 12 1
イベント39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
継続期間: 2009 9 142009 9 18

出版物シリーズ

名前ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Other

Other39th European Solid-State Device Research Conference, ESSDERC 2009
Greece
Athens
期間09/9/1409/9/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety Research

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  • これを引用

    Kang, H. C., Karasawa, H., Miyamoto, Y., Handa, H., Suemitsu, T., Suemitsu, M., & Otsuji, T. (2009). Epitaxial graphene field effect transistors on silicon substrates. : ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 189-192). [5331308] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331308