Epitaxial formation of graphene on Si substrates: From heteroepitaxy of 3C-SiC to Si sublimation

M. Suemitsu, H. Handa, E. Saito, H. Fukidome

研究成果: Conference contribution

抄録

Epitaxial graphene can be formed on Si substrates by a vacuum annealing of a 3C-SiC thin film preformed on Si substrate. In this graphene-on-silicon (GOS) method, graphene grows on three major low-index planes of Si substrates: Si(111), (110), and (100). Despite the difference in the quality of the SiC film depending on the orientation, the quality of the formed graphene shows very little variation, leaving the growth mechanism of graphene on cubic SiC crystals open to future studies. The growth rate of graphene, however, shows a sharp dependence on the orientation, which increases in the order of(111) < (001) < (110).

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 4
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ859-867
ページ数9
6
DOI
出版ステータスPublished - 2010 12 1
イベント4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
継続期間: 2010 10 102010 10 15

出版物シリーズ

名前ECS Transactions
番号6
33
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
国/地域United States
CityLas Vegas, NV
Period10/10/1010/10/15

ASJC Scopus subject areas

  • 工学(全般)

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