TY - GEN
T1 - Epitaxial formation of graphene on Si substrates
T2 - 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
AU - Suemitsu, M.
AU - Handa, H.
AU - Saito, E.
AU - Fukidome, H.
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Epitaxial graphene can be formed on Si substrates by a vacuum annealing of a 3C-SiC thin film preformed on Si substrate. In this graphene-on-silicon (GOS) method, graphene grows on three major low-index planes of Si substrates: Si(111), (110), and (100). Despite the difference in the quality of the SiC film depending on the orientation, the quality of the formed graphene shows very little variation, leaving the growth mechanism of graphene on cubic SiC crystals open to future studies. The growth rate of graphene, however, shows a sharp dependence on the orientation, which increases in the order of(111) < (001) < (110).
AB - Epitaxial graphene can be formed on Si substrates by a vacuum annealing of a 3C-SiC thin film preformed on Si substrate. In this graphene-on-silicon (GOS) method, graphene grows on three major low-index planes of Si substrates: Si(111), (110), and (100). Despite the difference in the quality of the SiC film depending on the orientation, the quality of the formed graphene shows very little variation, leaving the growth mechanism of graphene on cubic SiC crystals open to future studies. The growth rate of graphene, however, shows a sharp dependence on the orientation, which increases in the order of(111) < (001) < (110).
UR - http://www.scopus.com/inward/record.url?scp=79952669934&partnerID=8YFLogxK
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U2 - 10.1149/1.3487616
DO - 10.1149/1.3487616
M3 - Conference contribution
AN - SCOPUS:79952669934
SN - 9781566778251
T3 - ECS Transactions
SP - 859
EP - 867
BT - SiGe, Ge, and Related Compounds 4
Y2 - 10 October 2010 through 15 October 2010
ER -