Environmentally harmonized C F3 i plasma for low-damage and highly selective low- k etching

Seiji Samukawa, Yoshinari Ichihashi, Hiroto Ohtake, Eiichi Soda, Shuichi Saito

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Low-damage, high-rate, and highly selective low- k etching can be simultaneously satisfied using a plasma with an environmentally harmonized gas chemistry (C F3 I). Such a C F3 I plasma can drastically reduce the irradiation damage by ultraviolet (UV) photons during low- k etching, because the intensity of UV in C F3 I plasma is much lower than that in conventional C F4 plasma. The etching selectivity of SiOCH to a photoresist can be drastically improved by using C F3 I plasma because of reducing F radical generation. In addition, pulse-time-modulated C F3 I plasma causes a drastic increase in the etching rate because a large amount of negative ions can be generated. These results show that C F3 I plasma is a very promising candidate for low-damage and highly selective low- k etching.

本文言語English
論文番号053310
ジャーナルJournal of Applied Physics
103
5
DOI
出版ステータスPublished - 2008 3 24

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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