Environmentally friendly single-wafer spin cleaning using ultra-diluted HF/nitrogen jet spray without causing structural damage and material loss

Hideki Hirano, Kou Sato, Tsutomu Osaka, Hitoshi Kuniyasu, Takeshi Hattori

研究成果: Conference contribution

抄録

We have developed an ultra-diluted HF/nitrogen jet spray cleaning procedure for single-wafer spin cleaning, which can efficiently remove particulate and metallic contaminants in a short period of time from both silicon and silicon-dioxide surfaces without causing damage to fragile 45nm polysilicon gate structures. The use of a very low HF concentration makes the silicon and oxide losses negligible. This very simple single-step cleaning procedure drastically reduces the chemical and water comumption as well as electrical energy per wafer due to the short spraying time with the ultra-diluted HF at room temperature. HF wastewater, the only effluent of this cleaning, is recycled by forming CaF2, which can be a raw material for HF or Portland cement, so this cleaning meets the requirements with respect to the environmental control.

本文言語English
ホスト出版物のタイトルISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing
ページ167-170
ページ数4
DOI
出版ステータスPublished - 2006 12月 1
外部発表はい
イベントISSM 2006 - 15th International Symposium on Semiconductor Manufacturing - Tokyo, Japan
継続期間: 2007 9月 252007 9月 27

出版物シリーズ

名前IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
ISSN(印刷版)1523-553X

Other

OtherISSM 2006 - 15th International Symposium on Semiconductor Manufacturing
国/地域Japan
CityTokyo
Period07/9/2507/9/27

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 産業および生産工学
  • 電子工学および電気工学

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