Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

研究成果: Article › 査読