Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxum Liu, Takashi Matsukawa, Meishoku Masahara, Kunihiro Sakamoto, Junichi Tsukada, Kenichi Ishii, Hiromi Yamauchi, Eiichi Suzuki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We propose a flexible-pass-gate (Flex-PG) fin-type field effect transistor (FinFET) static random access memory (SRAM) cell to enhance both read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual common-gated FinFETs while its pass gates consist of threshold voltage (V th)-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both read and write margins by controlling the Vth of the pass gates.

本文言語English
論文番号054502
ジャーナルApplied Physics Express
2
5
DOI
出版ステータスPublished - 2009 5月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Enhancing noise margins of fin-type field effect transistor static random access memory cell by using threshold voltage-controllable flexible-pass-gates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル