Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulator

Enhancement type InP metal-insulator-semiconductor field-effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm²/Vs and 2000 cm²/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.