Enhancement type InP metal-insulator-semiconductor field-effect transistor with plasma anodic aluminium oxide as the gate insulator

Y. Hirayama, H. M. Park, F. Koshiga, T. Sugano

研究成果: Article査読

23 被引用数 (Scopus)

抄録

Enhancement type InP metal-insulator-semiconductor field-effect transistors were fabricated using plasma anodic aluminium oxide as the gate insulator. The effective electron mobilities in the surface channel are 1250 cm2/Vs and 2000 cm2/Vs at 300 and 80 K, respectively. The drift of the drain current at 300 K ceases a few minutes after applying a gate voltage and stable dc operation is observed over several hours.

本文言語English
ページ(範囲)712-713
ページ数2
ジャーナルApplied Physics Letters
40
8
DOI
出版ステータスPublished - 1982
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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