Enhancement of electron correlation in Co thin clusters grown on S/GaAs (001)

Ayumi Harasawa, Taichi Okuda, Takanori Wakita, Takahide Tohyama, Toyoaki Eguchi, Kan Nakatsuji, Nobuo Ueno, Krishna G. Nath, Toyohiko Kinoshita

研究成果: Article査読

2 被引用数 (Scopus)

抄録

An enhancement of the electron correlation effect by electron confinement is revealed in Co clusters formed on a sulfur passivated GaAs(001) surface. A satellite peak due to the strong electron correlation is observed at a binding energy of 5 eV in the valence band spectrum of Co photoemission spectroscopy. The photon energy dependences of the intensity and the spin polarization of the satellite are essentially the same to those of the well-known Ni 6 eV satellite. This suggests that the satellite is caused by the relatively strong 3d-3d electron correlation effect of the Co cluster and less hybridization effect at the interface.

本文言語English
論文番号205416
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
73
20
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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