Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess

Yen Ku Lin, Shuichi Noda, Ruey Bor Lee, Chia Ching Huang, Quang Ho Luc, Seiji Samukawa, Edward Yi Chang

研究成果: Conference contribution

抄録

An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.

本文言語English
ホスト出版物のタイトル16th International Conference on Nanotechnology - IEEE NANO 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ページ799-801
ページ数3
ISBN(電子版)9781509039142
DOI
出版ステータスPublished - 2016 11月 21
イベント16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
継続期間: 2016 8月 222016 8月 25

出版物シリーズ

名前16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
国/地域Japan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学

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