Enhanced tunnel magnetoresistance in a spinel oxide barrier with cation-site disorder

Hiroaki Sukegawa, Yoshio Miura, Shingo Muramoto, Seiji Mitani, Tomohiko Niizeki, Tadakatsu Ohkubo, Kazutaka Abe, Masafumi Shirai, Koichiro Inomata, Kazuhiro Hono

研究成果: Article査読

57 被引用数 (Scopus)

抄録

We report enhanced tunnel magnetoresistance (TMR) ratios of 188% (308%) at room temperature and 328% (479%) at 15 K for cation-site-disordered MgAl 2O 4-barrier magnetic tunnel junctions (MTJs) with Fe (Fe 0.5Co 0.5 alloy) electrodes, which exceed the TMR ratios theoretically calculated and experimentally observed for ordered spinel barriers. The enhancement of TMR ratios is attributed to the suppression of the so-called band-folding effect in ordered spinel MTJs. First-principles calculations describe a dominant role of the oxygen sublattice for spin-dependent coherent tunneling, suggesting a mechanism of coherent tunneling occurring even in the disordered systems.

本文言語English
論文番号184401
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
86
18
DOI
出版ステータスPublished - 2012 11 2

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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