Enhanced temperature characteristics of InGaAs/InAIGaAs multi-quantum-well lasers on low-in-content InGaAs ternary substrates

Takeshi Fujisawa, Masakazu Arai, Takaaki Kakitsuka, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Temperature characteristics of multi-quantum-well lasers on InGaAs ternary substrates are investigated. By using InAlGaAs barriers and low-In-content InGaAs substrates, the characteristic temperature of the laser can reach as high as 150K between 25 and 85°C due to the enhancement of the material gain. Calculated characteristic temperatures are in good agreement with those obtained by experiment, showing the validity of the results presented here.

本文言語English
ページ(範囲)412031-412033
ページ数3
ジャーナルApplied Physics Express
1
4
DOI
出版ステータスPublished - 2008 4 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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