Enhanced spontaneous emission in microcavity optical devices

Hiroyuki Yokoyama, S. D. Brorson, Erich P. Ippen, K. Nishi, T. Anan

研究成果: Paper査読

1 被引用数 (Scopus)

抄録

The effective mode densities normalized by the free-space effective mode density for a planar mirror waveguide and an optical wire that has a square cross section are reported. It is assumed that the light-emitting medium is located halfway between the two mirrors or at the center of the optical wire's cross section and that the electric dipoles are randomly oriented. If a semiconductor is the light-emitting medium, the spontaneous emission rate is obtained by a convolution of the mode density and the transition matrix element over a broad emission bandwidth. A table comparing approximate values of the spontaneous emission rate in both structures for a few different cavity sizes is given. It is found that an optical wire provides a much larger increase in spontaneous emission rate. Monolithic Fabry-Perot microcavities were fabricated by the epitaxial growth of both light-emitting GaAs/AlGaAs multiple quantum well (MQW) active layers and AlAs/AlGaAs multilayer reflectors on GaAs substrates and used to obtain experimental verification of the spontaneous emission rate change by a cavity. The decay of the spectrally integrated photoluminescence intensity for approximately 1018/cm3 initial carrier density is shown and discussed. Even though the change is by a factor of only approximately 2 for the present Fabry-Perot structure, the result shows that the spontaneous emission rate change will certainly play a role in the operation of recently developed surface-emitting semiconductor lasers.

本文言語English
ページ136-137
ページ数2
出版ステータスPublished - 1990 12 1
外部発表はい
イベント17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA
継続期間: 1990 5 211990 5 25

Other

Other17th International Conference on Quantum Electronics - IQEC '90
CityAnaheim, CA, USA
Period90/5/2190/5/25

ASJC Scopus subject areas

  • 工学(全般)

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