TY - JOUR
T1 - Enhanced growth rate for ammonothermal gallium nitride crystal growth using ammonium iodide mineralizer
AU - Tomida, D.
AU - Kagamitani, Y.
AU - Bao, Q.
AU - Hazu, K.
AU - Sawayama, H.
AU - Chichibu, S. F.
AU - Yokoyama, C.
AU - Fukuda, T.
AU - Ishiguro, T.
N1 - Funding Information:
The HVPE-GaN seed wafers were supplied by the Mitsubishi Chemical Corporation. This work was supported in part by the Project of Strategic Development for Energy Conservation Technology from a NEDO program by METI (Japan) and Grants in Aid from CANTech and IMRAM (Tohoku University, Japan).
PY - 2012/8/15
Y1 - 2012/8/15
N2 - High-temperature gallium nitride (GaN) crystal growth using the acidic ammonothermal method with ammonium iodide (NH 4I) as a mineralizer was investigated. The growth rate reached 105 μm/day, which was much higher than that previously achieved using acidic ammonothermal methods, and exceeded 100 μm/day, which is the minimum growth rate required for industrial applications. When NH 4I was used as a mineralizer, high-speed crystal growth was achieved at a relatively low pressure compared to the case of using an ammonium chloride (NH 4Cl) as a mineralizer.
AB - High-temperature gallium nitride (GaN) crystal growth using the acidic ammonothermal method with ammonium iodide (NH 4I) as a mineralizer was investigated. The growth rate reached 105 μm/day, which was much higher than that previously achieved using acidic ammonothermal methods, and exceeded 100 μm/day, which is the minimum growth rate required for industrial applications. When NH 4I was used as a mineralizer, high-speed crystal growth was achieved at a relatively low pressure compared to the case of using an ammonium chloride (NH 4Cl) as a mineralizer.
KW - A2. Ammonothermal crystal growth
KW - A2. Single crystal growth
KW - B1. Gallium nitride
KW - B2. Semiconducting gallium compounds
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U2 - 10.1016/j.jcrysgro.2012.04.042
DO - 10.1016/j.jcrysgro.2012.04.042
M3 - Article
AN - SCOPUS:84861553279
SN - 0022-0248
VL - 353
SP - 59
EP - 62
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -