Engineering magnetism in semiconductors

Tomasz Dietl, Hideo Ohno

研究成果: Article査読

69 被引用数 (Scopus)

抄録

Transition metal doped III-V, II-VI, and group IV compounds offer an unprecedented opportunity to explore ferromagnetism in semiconductors. Because ferromagnetic spin-spin interactions are mediated by holes in the valence band, changing the Fermi level using co-doping, electric fields, or light can directly manipulate the magnetic ordering. Moreover, engineering the Fermi level position by co-doping makes it possible to modify solubility and self-compensation limits, affecting magnetic characteristics in a number of surprising ways. The Fermi energy can even control the aggregation of magnetic ions, providing a new route to self-organization of magnetic nanostructures in a semiconductor host.

本文言語English
ページ(範囲)18-26
ページ数9
ジャーナルMaterials Today
9
11
DOI
出版ステータスPublished - 2006 11

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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