Energy storage properties of epitaxially grown x CaZrO3-(1- x)NaNbO3thin films prepared with chemical solution deposition method

T. Shiraishi, S. Suzuki, T. Kiguchi, T. J. Konno

研究成果: Article査読

抄録

xCaZrO3-(1-x)NaNbO3 thin films (x = 0 - 0.04) are epitaxially grown on (001)La:SrTiO3 single crystal substrates via chemical solution deposition, and their energy storage properties are investigated. X-ray diffraction measurements showed that the deposited films are solid solutions with a single perovskite phase. Microstructural analysis performed via electron microscopy reveals that the deposited films exhibit a columnar structure. In addition, selected area electron diffraction patterns show that an antiferroelectric phase formed in CaZrO3-substituted films. Relative dielectric constants, ϵr, measured at various temperatures indicate a dielectric anomaly caused by structural phase transition. Its onset temperature decreased from 180 to 80 °C with increasing x. To clarify the antiferroelectric behavior, polarization - electric field, P - E, and capacitance - electric field, C - E, hysteresis loops are measured at room temperature, and results show polarization switching behaviors arising from the antiferroelectric phase. The maximum recoverable energy density, 2.3 J/cm3, was observed for x = 0.01, with an energy storage efficiency of 72%. Furthermore, the P - E hysteresis loops measured at various temperatures revealed that CaZrO3 substitution can enhance the efficiency and hence, improve the thermal stability of energy storage properties.

本文言語English
論文番号044102
ジャーナルJournal of Applied Physics
128
4
DOI
出版ステータスPublished - 2020 7 28

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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