The energy band diagram of a hydrogen-terminated phosphorous-doped n-type diamond (111) surface has been studied by X-ray photoelectron spectroscopy and He-I excited secondary electron spectroscopy (SES). The resulting surface energy band diagram showed an upward band bending of ∼3.2 eV toward the surface with the Fermi level position being 1.8 eV above the valence band maximum. The cutoff energy in SES spectra turned out to be the conduction band minimum within an error of 0.1 eV; thus, the electron affinity of the present n-type sample can be said to be negative. The mechanism of the upward band bending for n-type diamonds is discussed in terms of the Fermi level pinning caused by surface defects such as graphite.
|ジャーナル||New Diamond and Frontier Carbon Technology|
|出版ステータス||Published - 2007 12 1|
ASJC Scopus subject areas
- Materials Science(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films