Energy band diagram of a H-terminated P-doped n-type diamond (111) surface

Shozo Kono, Kenji Mizuochi, Go Takyo, Tadahiko Goto, Tadashi Abukawa, Tomohiro Aoyama

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The energy band diagram of a hydrogen-terminated phosphorous-doped n-type diamond (111) surface has been studied by X-ray photoelectron spectroscopy and He-I excited secondary electron spectroscopy (SES). The resulting surface energy band diagram showed an upward band bending of ∼3.2 eV toward the surface with the Fermi level position being 1.8 eV above the valence band maximum. The cutoff energy in SES spectra turned out to be the conduction band minimum within an error of 0.1 eV; thus, the electron affinity of the present n-type sample can be said to be negative. The mechanism of the upward band bending for n-type diamonds is discussed in terms of the Fermi level pinning caused by surface defects such as graphite.

本文言語English
ページ(範囲)231-242
ページ数12
ジャーナルNew Diamond and Frontier Carbon Technology
17
5
出版ステータスPublished - 2007 12 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

フィンガープリント 「Energy band diagram of a H-terminated P-doped n-type diamond (111) surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル