Recently, the development of flash EEPROMs, a promising next-generation device, has been widely pursued. However, the recent EEPROMs have limited endurance. In this study, the degradation of the write/erase characteristic in conventional operation was investigated and a new cell design rule for a high reliability EEPROM was established. As a result, it was found that the endurance could be extended by a factor of 100.
|ジャーナル||Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)|
|出版ステータス||Published - 1997 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Computer Networks and Communications
- Electrical and Electronic Engineering