Systèmes électroniques bidimensionnels dans des nano-hétérostructures de semi-conducteurs comme sources de rayonnement térahertz

Taiichi Otsuji; Hiromi Karasawa; Takayuki Watanabe; Tetsuya Suemitsu; Maki Suemitsu; Eiichi Sano; Wojciech Knap; Victor Ryzhii

doi:10.1016/j.crhy.2010.04.002

Systèmes électroniques bidimensionnels dans des nano-hétérostructures de semi-conducteurs comme sources de rayonnement térahertz

Taiichi Otsuji, Hiromi Karasawa, Takayuki Watanabe, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

研究成果: Short survey › 査読

8 被引用数 (Scopus)

抄録

This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

寄稿の翻訳タイトル	Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures
本文言語	French
ページ（範囲）	421-432
ページ数	12
ジャーナル	Comptes Rendus Physique
巻	11
号	7-8
DOI	https://doi.org/10.1016/j.crhy.2010.04.002
出版ステータス	Published - 2010 8

ASJC Scopus subject areas

物理学および天文学（全般）

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10.1016/j.crhy.2010.04.002

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引用スタイル

Systèmes électroniques bidimensionnels dans des nano-hétérostructures de semi-conducteurs comme sources de rayonnement térahertz. / Otsuji, Taiichi; Karasawa, Hiromi; Watanabe, Takayuki ; Suemitsu, Tetsuya; Suemitsu, Maki; Sano, Eiichi; Knap, Wojciech; Ryzhii, Victor.

In: Comptes Rendus Physique, Vol. 11, No. 7-8, 08.2010, p. 421-432.

研究成果: Short survey › 査読

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title = "Syst{\`e}mes {\'e}lectroniques bidimensionnels dans des nano-h{\'e}t{\'e}rostructures de semi-conducteurs comme sources de rayonnement t{\'e}rahertz",

abstract = "This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.",

keywords = "Graphene, Heterostructures, Plasmons, Terahertz emission, Two-dimensional electrons",

author = "Taiichi Otsuji and Hiromi Karasawa and Takayuki Watanabe and Tetsuya Suemitsu and Maki Suemitsu and Eiichi Sano and Wojciech Knap and Victor Ryzhii",

note = "Funding Information: The author would like to thank Tsuneyoshi Komori, Yuki Tsuda, Hiroyuki Handa, Yu Miyamoto, and Hirokazu Fukidome at RIEC, Tohoku University, Japan, Yahya M. Meziani at Salamanca University, Spain, Viacheslav Popov at KIREE, Russian Academy of Science, Saratov, Russia, Dominique Coquillat, Abdelouahad El Fatimy, and Frederic Teppe at CNRS-University of Montpellier, France, and Maxim Ryzhii and Akira Satou at University of Aizu, Japan, for their extensive contributions throughout this work. This work is financially supported in part by the JST-CREST, Japan, and the JSPS-BR(S), Japan.",

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T1 - Systèmes électroniques bidimensionnels dans des nano-hétérostructures de semi-conducteurs comme sources de rayonnement térahertz

AU - Otsuji, Taiichi

AU - Karasawa, Hiromi

AU - Watanabe, Takayuki

AU - Suemitsu, Tetsuya

AU - Suemitsu, Maki

AU - Sano, Eiichi

AU - Knap, Wojciech

AU - Ryzhii, Victor

N1 - Funding Information: The author would like to thank Tsuneyoshi Komori, Yuki Tsuda, Hiroyuki Handa, Yu Miyamoto, and Hirokazu Fukidome at RIEC, Tohoku University, Japan, Yahya M. Meziani at Salamanca University, Spain, Viacheslav Popov at KIREE, Russian Academy of Science, Saratov, Russia, Dominique Coquillat, Abdelouahad El Fatimy, and Frederic Teppe at CNRS-University of Montpellier, France, and Maxim Ryzhii and Akira Satou at University of Aizu, Japan, for their extensive contributions throughout this work. This work is financially supported in part by the JST-CREST, Japan, and the JSPS-BR(S), Japan.

PY - 2010/8

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N2 - This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

AB - This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

KW - Graphene

KW - Heterostructures

KW - Plasmons

KW - Terahertz emission

KW - Two-dimensional electrons

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