抄録
This article reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. The second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to the massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.
寄稿の翻訳タイトル | Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano-heterostructures |
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本文言語 | French |
ページ(範囲) | 421-432 |
ページ数 | 12 |
ジャーナル | Comptes Rendus Physique |
巻 | 11 |
号 | 7-8 |
DOI | |
出版ステータス | Published - 2010 8月 |
ASJC Scopus subject areas
- 物理学および天文学(全般)