Emission of terahertz radiation from two-dimensional electron systems in semiconductor nano- and hetero-structures

Taiichi Otsuji, Takayuki Watanabe, Amine El Moutaouakil, Hiromi Karasawa, Tsuneyoshi Komori, Akira Satou, Tetsuya Suemitsu, Maki Suemitsu, Eiichi Sano, Wojciech Knap, Victor Ryzhii

研究成果: Article査読

27 被引用数 (Scopus)

抄録

This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.

本文言語English
ページ(範囲)629-645
ページ数17
ジャーナルJournal of Infrared, Millimeter, and Terahertz Waves
32
5
DOI
出版ステータスPublished - 2011 5

ASJC Scopus subject areas

  • 放射線
  • 器械工学
  • 凝縮系物理学
  • 電子工学および電気工学

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