Emission and detection of terahertz radiation using two-dimensional electrons in III-V semiconductors and graphene

Taiichi Otsuji, Takayuki Watanabe, Stephane A. Boubanga Tombet, Akira Satou, Wojciech M. Knap, Vyacheslav V. Popov, Maxim Ryzhii, Victor Ryzhii

研究成果: Article査読

88 被引用数 (Scopus)

抄録

Recent advances in emission and detection of terahertz radiation using two-dimensional (2D) electron systems in III-V semiconductors and graphene are described. First the 2D plasmon resonance is presented to demonstrate intense broadband terahertz emission and detection from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original asymmetrically interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting peculiar carrier transport and optical properties owing to massless and gapless energy spectrum. Theoretical and experimental studies toward the creation of graphene terahertz injection lasers are described.

本文言語English
論文番号6423871
ページ(範囲)63-71
ページ数9
ジャーナルIEEE Transactions on Terahertz Science and Technology
3
1
DOI
出版ステータスPublished - 2013

ASJC Scopus subject areas

  • 放射線
  • 電子工学および電気工学

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