抄録
This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dualgrating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
本文言語 | English |
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論文番号 | 87250F |
ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
巻 | 8725 |
DOI | |
出版ステータス | Published - 2013 8 12 |
イベント | 2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference - Baltimore, MD, United States 継続期間: 2013 4 29 → 2013 5 3 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering