抄録
This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors' original asymmetrically interdigitated dualgrating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
| 本文言語 | English |
|---|---|
| 論文番号 | 87250F |
| ジャーナル | Proceedings of SPIE - The International Society for Optical Engineering |
| 巻 | 8725 |
| DOI | |
| 出版ステータス | Published - 2013 |
| イベント | 2013 Micro- and Nanotechnology Sensors, Systems, and Applications V Conference - Baltimore, MD, United States 継続期間: 2013 4月 29 → 2013 5月 3 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- コンピュータ サイエンスの応用
- 応用数学
- 電子工学および電気工学