Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

Recently in semiconductor memories such as embedded memories (SRAM, e-DRAM), main memories (DRAM) and storage memories (NAND memory), it is becoming difficult to meet the target performance only by scaling technologies. Especially for high speed embedded memories, the large power consumption brings more serious issues due to rapid increase in memory capacity under multi core MPUs, operation speed and leakage current of scaled CMOS. Moreover, the speed gap between each memory levels in addition to that between the operation speed of MPUs and that of embedded memories and main memories have expanded year by year.

元の言語English
ホスト出版物のタイトル2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509058051
DOI
出版物ステータスPublished - 2017 6 7
イベント2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan, Province of China
継続期間: 2017 4 242017 4 27

出版物シリーズ

名前2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Other

Other2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
Taiwan, Province of China
Hsinchu
期間17/4/2417/4/27

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • これを引用

    Endoh, T. (2017). Embedded nonvolatile memory with STT-MRAMs and its application for nonvolatile brain-inspired VLSIs. : 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 [7942446] (2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2017.7942446