Elimination of interface states in the GaAs band-gap by cyanide treatment: XPS measurements under bias

Tomohiro Kubota, Ján Ivančo, Masao Takahashi, Kenji Yoneda, Yoshihiro Todokoro, Hikaru Kobayashi

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Energy distribution of interface states for GaAs-based metal-oxide-semiconductor structure with an ultra-thin silicon oxide layer is obtained from "XPS measurements under bias." The interface state spectra have peaked-structure at 0.7 and 0.9 eV above the valence band maximum and they are attributed to (++/+) and (+/0) transitions of AsGa antisite defects at the interface. When cyanide treatment (i.e., the immersion in a KCN aqueous solution followed by the rinse in boiling water) is performed after the deposition of the silicon oxide layer, the interface state density is decreased to ∼ 50%, resulting in the partial unpinning of the Fermi level.

本文言語English
ページ(範囲)329-337
ページ数9
ジャーナルSurface Science
529
3
DOI
出版ステータスPublished - 2003 4 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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