Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC on Si(111) by laser CVD

Qingfang Xu, Peipei Zhu, Qingyun Sun, Rong Tu, Meijun Yang, Song Zhang, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Elimination of double position domains (DPDs) in epitaxial 〈111〉-3C-SiC film on Si(111) substrate was conducted by laser chemical vapor deposition (LCVD) without carbonization. Transmission electron microscopy and pole figure were employed to investigate the microstructure and volume fraction of DPDs in the epitaxial layers, respectively. DPDs significantly decreased with decreasing deposition temperature (T dep ) and vanished at T dep  = 1273 K. The mechanism of the elimination of DPDs by LCVD also has been discussed.

本文言語English
ページ(範囲)662-666
ページ数5
ジャーナルApplied Surface Science
426
DOI
出版ステータスPublished - 2017 12月 31

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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