Electrostatically reversible polarity of dual-gated graphene transistors

Shu Nakaharai, Tomohiko Iijima, Shinichi Ogawa, Song Lin Li, Kazuhito Tsukagoshi, Shintaro Sato, Naoki Yokoyama

研究成果: Article査読

11 被引用数 (Scopus)

抄録

We developed dual-gated graphene transistors in which the transistor polarity (n-type or p-type) is electrostatically reversible by the gate bias of one of the top gates. In this device, a channel is defined as the region between a pair of top gates, where graphene is irradiated by an accelerated helium ion beam to form a defect-induced transport gap. This device features not only a large current ON-OFF ratio of four orders of magnitude but also unipolarity of transistors, which would otherwise be ambipolar. We also show how these polarity-reversible transistors can be used in logic circuits.

本文言語English
論文番号6777549
ページ(範囲)1039-1043
ページ数5
ジャーナルIEEE Transactions on Nanotechnology
13
6
DOI
出版ステータスPublished - 2014 11月 1
外部発表はい

ASJC Scopus subject areas

  • コンピュータ サイエンスの応用
  • 電子工学および電気工学

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