Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

K. Ueno, H. Shimotani, Y. Iwasa, M. Kawasaki

研究成果: Article査読

71 被引用数 (Scopus)

抄録

In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm-2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm -2 at 5 V, and the electron mobility at 2 K was as large as 10 4 cm2 /V s. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.

本文言語English
論文番号252107
ジャーナルApplied Physics Letters
96
25
DOI
出版ステータスPublished - 2010 6 21
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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