TY - JOUR
T1 - Electronic transport properties of a metal-semiconductor carbon nanotube heterojunction
AU - Farajian, Amir A.
AU - Mizuseki, Hiroshi
AU - Kawazoe, Yoshiyuki
N1 - Funding Information:
The authors acknowledge stimulating discussions with S. Maruyama. They would also like to express their sincere thanks to the crew of the Center for Computational Materials Science of the Institute for Materials Research, Tohoku University, for their continuous support of the computing facilities. The cooperation of R. Note is specially acknowledged. This work is supported by the Special Coordination Funds of the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government.
PY - 2004/4
Y1 - 2004/4
N2 - We use a four-orbital-per-atom tight-binding model in order to investigate the transport properties of a metal-semiconductor carbon nanotube heterostructure. The metallic (armchair) and semiconducting (zigzag) parts of the system are attached via a pentagon and a heptagon defects. It is shown that the "left-right" asymmetry of the system readily results in an asymmetric current-voltage (I-V) characteristic, which is of interest in, e.g., nano-diode applications. Although introducing external dopants is one way to enhance the intrinsic asymmetric transport characteristic of the system, we show, by examining the effects of severe bendings, that mechanical deformation may be used to enhance the asymmetric transport and to manipulate the I-V characteristic in a controllable manner, so as to achieve a particularly desired transport characteristic.
AB - We use a four-orbital-per-atom tight-binding model in order to investigate the transport properties of a metal-semiconductor carbon nanotube heterostructure. The metallic (armchair) and semiconducting (zigzag) parts of the system are attached via a pentagon and a heptagon defects. It is shown that the "left-right" asymmetry of the system readily results in an asymmetric current-voltage (I-V) characteristic, which is of interest in, e.g., nano-diode applications. Although introducing external dopants is one way to enhance the intrinsic asymmetric transport characteristic of the system, we show, by examining the effects of severe bendings, that mechanical deformation may be used to enhance the asymmetric transport and to manipulate the I-V characteristic in a controllable manner, so as to achieve a particularly desired transport characteristic.
KW - Carbon nanotubes
KW - I-V characteristics
KW - Mechanical deformations
KW - Quantum transport
KW - Rectifying effect
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U2 - 10.1016/j.physe.2003.12.097
DO - 10.1016/j.physe.2003.12.097
M3 - Conference article
AN - SCOPUS:1842682642
VL - 22
SP - 675
EP - 678
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-3
T2 - 15th International Conference on ELectronic Propreties
Y2 - 14 July 2003 through 18 July 2003
ER -